## 摘要

We have studied the gate finger number and gate length dependence on minimum noise figure (N F_{min}) in deep sub-micrometer MOSFETs. A lowest N F_{min} of 0.93 dB is measured in 0.18-μm MOSFET at 5.8 GHz as increasing finger number to 50 fingers, but increases abnormally when above 50. The scaling gate length to 0.13 μm shows larger N F_{min} than the 0.18-μm case at the same finger number. From the analysis of a well-calibrated device model, the abnormal finger number dependence is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number. The scaling to 0.13-μm MOSFET gives higher N F_{min} due to the higher gate resistance and a modified T-gate structure proposed to optimize the N F_{min} for further scaling down of the MOSFET.

原文 | English |
---|---|

頁（從 - 到） | 464-466 |

頁數 | 3 |

期刊 | IEEE Microwave and Wireless Components Letters |

卷 | 12 |

發行號 | 12 |

DOIs | |

出版狀態 | Published - 1 十二月 2002 |